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industrial & multimarket data sheet 1.3, 2011-03-01 preliminary optimos? bsb028n06nn3 g n-channel power mosfet
optimos? power-mosfet bsb028n06nn3 g preliminary data sheet 1 1.3, 2011-03-01 1 description optimos?60v products are class leading power mosfets for highest power density and energy efficient solutions. ultra low gate- and output charges together with lowest on state resistance in small footprint packages make optimos? 60v the best choice for the demanding requir ements of switched mode power supplies in servers, datacom and telecom applications but also for motor drives. with almost no parasitic package inductances, the canpak a llows best controllability of the gate in highly dynamic switchin g enviroments. this package in addition features best cooli ng capability through to p-side cooling of the metal can. hence, this packaging technology combined wit h the optimos silicon enables highest efficiency levels while having mininal space requirements at the same time. features ? optimized technology for dc/dc converters ? 100% avalanche tested ? excellent q g x r ds(on) product (fom) ? qualified according to jedec 1) for target applications ? superior thermal resistance ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 ? double sided cooling ? compatible with directfet? pack age mn footprint and outline 2) ? n-channel, normal level ? low parasitic inductance ? low profile (<0.7 mm) applications ? dc/dc converters ? synchronous rectification ? power distribution ? motor drive applications 1) j-std20 and jesd22 2) directfet ? is a trademark of inte rnational rectifier corpor ation. bsb028n06nn3 g uses directfet ? technology licensed from international rectifier corporation table 1 key performance parameters parameter value unit related links v ds 60 v ifx optimos webpage r ds(on),max 2.8 m ifx optimos product brief i d 90 a ifx optimos spice models q oss 87 nc ifx design tools q g . typ 108 type package marking bsb028n06nn3 g mg-wdson-2 0106
optimos? power-mosfet bsb028n06nn3 g preliminary data sheet 2 1.3, 2011-03-01 2 maximum ratings at t j = 25 c, unless otherwise specified. 3 thermal characteristics table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current i d --90 a v gs =10 v, t c =25 c 85 v gs =10 v, t c =100 c 22 v gs =10 v, t a =25 c, r thja =58 k/w) 1) 1) directfet ? is a trademark of inter national rectifier corporation. bsb028n 06nn3 g uses directfet ? technology licensed from international rectifier corporation pulsed drain current 2) 2) see figure 3 for more detailed information i d,pulse --360 t c =25 c avalanche energy, single pulse e as --590 mj i d =30 a, r gs =25 gate source voltage v gs -20 - 20 v power dissipation p tot --78 w t c =25 c 2.2 t a =25 c, r thja =58 3) k/w 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6cm2 (o ne layer, 70 m thick) cop per area for drain connection. pcb is vertical in still air. operating and storage temperature t j , t stg -40 - 150 c iec climatic category; din iec 68-1 55 150 56 ncm table 3 thermal characteristics parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - 1.0 - k/w bottom -1.6- top device on pcb r thja -- 58 6 cm 2 cooling area 1) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (o ne layer, 70, thick) copper area for drain conneciton. pcb is vertical in still air.
optimos? power-mosfet bsb028n06nn3 g electrical characteristics preliminary data sheet 3 1.3, 2011-03-01 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 4 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 60 - - v v gs =0 v, i d =1 ma gate threshold voltage v gs(th) 23 4 v ds = v gs , i d =102 a zero gate voltage drain current i dss -0.110a v ds =60v, v gs =0 v, t j =25 c - 10 100 v ds =60 v, v gs =0 v, t j =125 c gate-source leakage current i gss - 10 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) -2.22.8m v gs =10 v, i d =30a gate resistance r g -0.5- transconductance g fs 42 83 s | v ds |>2| i d|rds(on)max , i d =30 a table 5 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss - 8800 12000 pf v gs =0 v, v ds =30 v, f =1 mhz output capacitance c oss - 2100 2800 reverse transfer capacitance c rss -64- turn-on delay time t d(on) -21- ns v dd =30v, v gs =10 v, i d =30 a, r g =1.6 rise time t r -9- turn-off delay time t d(off) -38- fall time t f -6-
optimos? power-mosfet bsb028n06nn3 g electrical characteristics preliminary data sheet 4 1.3, 2011-03-01 table 6 gate charge characteristics 1) 1) see figure 16 for gate charge parameter definition parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs -41- nc v dd =30 v, i d =30 a, v gs =0 to 10 v q gd 8 gate to drain charge q sw -23- switching charge q g - 108 143 gate charge total v plateau -4.6- v output charge q oss 87 116 nc v dd =30 v, v gs =0 v table 7 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode continuous forward current i s 30 a t c =25 c diode pulse current i s,pulse 120 diode forward voltage v sd -0.81.2v v gs =0 v, i f =30 a, t j =25 c reverse reco very charge q rr -87- nc v r =30v, i f = i s , d i f /d t =100 a/s reverse recovery time t rr -60- ns
optimos? power-mosfet bsb028n06nn3 g electrical characteristics diagrams preliminary data sheet 5 1.3, 2011-03-01 5 electrical characteristics diagrams table 8 1 power dissipation 2 drain current p tot = f( t c ) i d =f(t c ); parameter :v gs table 9 3 safe operating area t c =25 c 4 max. transient thermal impedance i d =f( v ds ); t j =25 c; d=0; parameter: t p z (thjc) =f( t p ); parameter: d= t p / t
optimos? power-mosfet bsb028n06nn3 g electrical characteristics diagrams preliminary data sheet 6 1.3, 2011-03-01 table 10 5 typ. output characteristics t c =25 c 6 typ. drain-source on-state resistance i d =f( v ds ); t j =25 c; parameter: v gs r ds(on) =f( i d ); t j =25 c; parameter: v gs table 11 7 typ. transfer characteristics 8 typ. forward transconductance i d =f(vgs); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c
optimos? power-mosfet bsb028n06nn3 g electrical characteristics diagrams preliminary data sheet 7 1.3, 2011-03-01 table 12 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; table 13 11 typ. capacitances 12 forward characteristics of reverse diode c=f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ); parameter: t j
optimos? power-mosfet bsb028n06nn3 g electrical characteristics diagrams preliminary data sheet 8 1.3, 2011-03-01 table 14 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ; parameter: t j(start) v gs =f( q gate ); i d =30 a pulsed; parameter: v dd table 15 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma
optimos? power-mosfet bsb028n06nn3 g package outlines preliminary data sheet 9 1.3, 2011-03-01 6 package outlines figure 1 outlines mg-wdson-2, dimensions in mm/inches
optimos? power-mosfet bsb028n06nn3 g package outlines preliminary data sheet 10 1.3, 2011-03-01 7 package outlines figure 2 outlines mg-wdson-2, dimensions in mm/inches
optimos? power-mosfet bsb028n06nn3 g package outlines preliminary data sheet 11 1.3, 2011-03-01 8 package outlines figure 3 dimensions in mm/ recomended stencil thikness 150m
optimos? power-mosfet bsb028n06nn3 g revision history preliminary data sheet 12 1.3, 2011-03-01 9 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2011-03-01 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applicat ions or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protec t human life. if they fail, it is reason able to assume that the health of the user or other persons may be endangered. revision history: 2011-03-01, 1.3 previous revision: revision subjects (major ch anges since last revision) 0.1 release of target data sheet 1.0 release of preliminary data sheet

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